| P10 |
Interfaces and grain boundaries |
|
[Thursday, July 13, 16.00-18.30, Room E] |
| Chair: |
W. Mader, Bonn; J. Thibault, Grenoble; |
| Oral presentations: |
|
| 16.00-16.40 |
Studying interfaces by high resolution transmission electron
microscopy : possibilities and limits through some examples (invited)
J.-L.
Rouviere, M. Arlery, M. Charleux |
| 16.40-17.20 |
Quantification of segregation to grain boundaries and
diffusion at interfaces by energy-filtered transmission electron microscopy
(invited)
T. Walther,
J. Barf, W. Mader |
| 17.20-17.35 |
A combined approach of analytical and high-resolution
TEM to determine the interface structure of Cu/(1120) alpha-Al(2)O(3)
Ch.
Scheu, W. Stein, R. Schweinfest, T. Wagner, M. Rühle |
| 17.35-17.50 |
Characterization of the interface between lanthanum hexaaluminate
and sapphire by exit wave reconstruction
A. Steinecker,
B. Wessler, W. Mader |
| 17.50-18.05 |
Volume expansion of sigma3 coherent twin grain boundary
in Mo
T. Vystavěl,
J. Gemperlová, A. Gemperle, J.M. Pénisson |
| 18.05-18.20 |
Investigations of substitutional impurity segregation
to the sigma 5(310)/[001] STGB in FCC metals: a EFTEM and HRTEM study
J.M.
Plitzko, G.H. Campbell, W.E. King, S.M. Foiles |
| Posters: |
[Wednesday, July 12, 13.30-14.50] |
| P10-1 |
Electronic structure investigations of metal/strontiumtitanate
interfaces
K. van
Benthem, Ch. Scheu, W. Sigle, M. Rühle |
| P10-2 |
Strain fields near the plate-like oxygen precipitate/Si-matrix
interface
T. Okuyama,
K. Matsunaga, M. Nakayama, Y. Tomokiyo, K. Mori, O.V. der Biest |
| P10-3 |
Dynamical microstructure change with diffusion at metal/metal
interface during electron irradiation
H. Takahashi,
S. Ohta, T. Shibayama |
| P10-4 |
Grain boundaries in highly anisotropic silicon nitride:
'special' grain boundaries
M. E. Brito,
K. Watari, K. Hirao, M. Toriyama |
| P10-5 |
TEM, photoetching and AFM study of Cu-diffused GaAs
C. Frigeri,
J.L. Weyher, S. Müller, P. Hiesinger |
| P10-6 |
SEM investigation of electromigration damage in small
copper interconnects - influence of microstructure and local orientation
H. Wendrock,
S. Menzel, T. Koetter, K. Wetzig |
| P10-7 |
Solid-state reactions between BaTiO(3)(001) substrates
and SiO(2) thin films studied by TEM
A. Graff,
S. Senz, N.D. Zakharov, D. Hesse |
| P10-8 |
Structure and composition of inversion boundaries in
Sn-doped ZnO
N. Daneu,
T. Walther, A. Rečnik, S. Bernik, W. Mader |
| P10-9 |
Charge balance models for inversion boundaries in ZnO
A. Rečnik,
M. Čeh, N. Daneu, T. Walther, W. Mader |
| P10-10 |
Comparing empirical crystal chemistry methods with ab-initio
simulations of the sigma5 grain boundary in SrTiO(3)
J. A. Zaborac,
N. D. Browning, M. Kim, G. Duscher, M. F. Chisholm, S. J. Pennycook |
| P10-11 |
SEM analysis in a study of the processes occuring on
metal-mould contact surface
Z.Janjuševic,
K.Kovačevic, Z.Ačimovic, Lj.Pavlovic |
| P10-12 |
Interpretation of HREM-images of projected 3D misfit
dislocation networks using a combined molecular statics and multislice
approach
A. Levay,
G. Möbus, V. Vitek, M. Rühle, G. Tichy |
| P10-13 |
HREM of an heterophase interface: artifacts in the distance
profile measurement
M. Lamy,
J. Thibault |
|
